Firstly, the PV panels convert solar energy into electrical energy, commonly utilizing diodes and MOSFETs. The diodes are used to prevent reverse flow, ensuring that the electrical energy flows correctly from the solar panels to the battery system. MOSFETs, on the other hand, control the switches of the inverter, converting the direct current PV energy into alternating current electrical energy.

Secondly, the inverter also relies on power semiconductor devices. The inverter converts the direct current generated by the PV panels into alternating current, requiring high-frequency switch power devices such as IGBTs and MOSFETs. These devices efficiently convert electrical energy and achieve stable output by adjusting the switch frequency and duty cycle.

Lastly, the storage battery is used in the PV energy storage system to store excess electrical energy for future use. Power semiconductor devices are utilized in the charging and discharging processes of the PV energy storage system to control and regulate electrical energy, ensuring stable and efficient energy storage.

To control the switching speed of power semiconductor devices, a driver circuit is essential. The driver serves as a crucial link between the control unit (MCU) and the power semiconductor devices, providing the energy required for the switching process and offering protection functions. A comprehensive and well-functioning driver ensures the safe operation of the switching devices.

For this purpose, Hongwan has introduced a gate driver that can drive 1200V IGBTs, while also integrating undervoltage, overvoltage, and over-temperature protection functions. This product maximizes the protection of the system's normal operation and prevents system failures caused by voltage abnormalities.